Heterogeneous epitaxial substrate and its manufacturing method
TW202635964APending Publication Date: 2026-09-01SHIN ETSU HANDOTAI CO LTD
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Patent Information
- Application Number
- TW114139200
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-31
- Filing Date
- 2025-10-13
- Publication Date
- 2026-09-01
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Abstract
This invention relates to a heteroepitaxial substrate and a method for manufacturing the same. The heteroepitaxial substrate comprises a substrate, an intermediate layer on the substrate, and a heteroepitaxial layer on the intermediate layer. The coefficient of thermal expansion of the intermediate layer is between that of the substrate and the heteroepitaxial layer. This provides a heteroepitaxial substrate and a method for manufacturing the same, which suppresses warping or cracking by utilizing a structure with a single index. none
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