Improved structure of thin vapor chamber

Abstract

An improved structure of thin vapor chamber having a first plate, a second plate, and a plurality of supporting structures is provided. The first plate has a first plate-portion and a first frame-portion surrounding the first plate-portion. The first frame-portion has a first accommodated area facing to the first plate-portion and a first capillary layer arranged in the first accommodated area. The second plate is stacked on the first plate and has a second plate-portion and a second frame-portion surrounding the second plate-portion. The second frame-portion has a second accommodated area corresponding to the first accommodated area and a second capillary layer arranged in the second accommodated area. The supporting structures are arranged in the first and second accommodated areas to abut against between the first and second capillary layers. The first and second accommodated areas are formed by etching. A sum of the first and second accommodated areas is between

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