Reflective blank photomask and manufacturing method of reflective photomask

TW202636206APending Publication Date: 2026-09-01SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW114141890
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-30
Filing Date
2025-10-29
Publication Date
2026-09-01

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    Figure TWG2TA001074529_003
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Abstract

[Problem] To provide a reflective blank photomask that does not damage the protective film during photomask processing, and a method for manufacturing a reflective photomask using the reflective blank photomask. [Solution] The reflective blank photomask (100) of the present invention is a reflective blank photomask (100) material used in EUV lithography using EUV light as the exposure light. The reflective blank photomask (100) has: a substrate (1); a multilayer reflective film (2) formed on a main surface of the substrate (1) to reflect the exposure light; a protective film (3) formed on the multilayer reflective film (2) to protect the multilayer reflective film (2); an absorbing film (6) formed above the protective film (3) to absorb the exposure light; and an intermediate film (4, 5) disposed between the protective film (3) and the absorbing film (6). The intermediate films (4, 5) have: a first intermediate film (4) containing niobium (Nb); and a second intermediate film (5) disposed on the side of the absorber film (6) further than the first intermediate film (4) and made of a material that can be dry-etched with oxygen-containing gas. The absorber film (6) is formed of a material that can be dry-etched with fluorine-containing gas.
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