Method for manufacturing composition for photoresist film formation, photoresist layer and semiconductor device

TW202636216APending Publication Date: 2026-09-01RAPIDUS CORP
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Patent Information

Application Number
TW114144876
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-07-24
Filing Date
2025-11-18
Publication Date
2026-09-01

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Abstract

[Problem] To provide a composition for forming a photoresist film that can form a photoresist pattern with excellent adhesion to the workpiece in EUV lithography. [Solution] The composition for forming a photoresist film of this embodiment includes at least one of the group consisting of an organometallic structure composed of metal oxide clusters and organic ligands, and a sensitizer.
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