Alkali-soluble lithography interstitial material composition

TW202636217APending Publication Date: 2026-09-01NISSAN CHEM CORP
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Patent Information

Application Number
TW114140320
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-18
Filing Date
2025-10-17
Publication Date
2026-09-01

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Abstract

A gap-filling material composition is used in the manufacture of a semiconductor device employing a method of coating a substrate having a hole having an aspect ratio of 1 or more in the form of a height / diameter and transferring an image onto the substrate using a photolithography process. The composition is a gap-filling material composition applied to the substrate before the photoresist is coated. The composition contains a polymer and one or more selected from crosslinking agents and curing catalysts. The polymer includes at least one selected from polymers having a specific partial structure, polymers having a specific structural unit, and polyamide.
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