Quantum device and method for manufacturing a quantum device

Abstract

comprising: - providing and forming, on a surface of a substrate: ○ semiconductor portions and a central semiconductor region arranged between the portions and separated from each of the portions by dielectric regions, then ○ deposition of a gate stack, then ○ deposition of a hard mask covering a gate conductor, then structuring of the hard mask forming an opening vertically in line with the central region; - forming a mask comprising a pattern defining gates and a pattern comprising a coupling electrode

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