Memory circuit and method of forming the same

Abstract

A memory circuit includes a first memory cell. The first memory cell includes a first and a second storage element, a first and a second selection transistor and a first word line transistor. The first storage element is on a back-side of a substrate opposite from a front-side of the substrate. The second storage element is on the back-side of the substrate, and is separated from the first storage element in a first direction. The first selection transistor is coupled to the first storage element. The second selection transistor is coupled to the second storage element. The first word line transistor is coupled to the first or second selection transistor, and is on the front-side of the substrate. One of the first or second storage element is programmed during a programming operation, and another of the first or second storage element fails to be programmed during the programming operation.

Images