Method and system for repairing flash memory

TW202636453AInactive Publication Date: 2026-09-01NAT TAIWAN UNIV OF SCI & TECH
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Patent Information

Application Number
TW114107020
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-02-26
Publication Date
2026-09-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

A flash memory repairing method comprises the following steps: a testing circuit testing a flash memory to generate a testing result including a fault information, and the fault information including the information of at least one faulty bit and the quantity of faulty bit of a codeword in the flash memory; comparing the quantity of faulty bit of the codeword with a predetermined threshold value; correcting the at least one faulty bit by an error correction code when the quantity of faulty bit of the codeword is less than the predetermined threshold value; and, replacing the at least one faulty bit with the redundancy of the flash memory when the quantity of faulty bit of the codeword is greater than or equal to the predetermined threshold value.
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