Method and system for repairing flash memory
TW202636453AInactive Publication Date: 2026-09-01NAT TAIWAN UNIV OF SCI & TECH
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Patent Information
- Application Number
- TW114107020
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-26
- Publication Date
- 2026-09-01
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
A flash memory repairing method comprises the following steps: a testing circuit testing a flash memory to generate a testing result including a fault information, and the fault information including the information of at least one faulty bit and the quantity of faulty bit of a codeword in the flash memory; comparing the quantity of faulty bit of the codeword with a predetermined threshold value; correcting the at least one faulty bit by an error correction code when the quantity of faulty bit of the codeword is less than the predetermined threshold value; and, replacing the at least one faulty bit with the redundancy of the flash memory when the quantity of faulty bit of the codeword is greater than or equal to the predetermined threshold value.
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