Plasma treatment unit

Abstract

This invention provides a plasma processing apparatus for efficiently performing plasma processing. The plasma processing apparatus includes: a chamber; a substrate support disposed within the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF signal generator electrically connected to the upper or lower electrode and configured to generate an RF signal for generating plasma within the chamber; a first voltage signal generator electrically connected to the lower electrode and configured to generate a first voltage signal having a sequence of first voltage pulses; a second voltage signal generator electrically connected to the upper electrode and configured to generate a second voltage signal, and including a rectifier element electrically connected between a ground potential and the upper electrode, and a voltage phase adjustment element electrically connected in series with the rectifier element between the ground potential and the upper electrode; one or more sensors for monitoring the state of the plasma within the chamber; and a control unit configured to control the waveform of the second voltage signal based on the outputs of the one or more sensors.

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