Plasma treatment unit

Abstract

This invention provides a plasma processing apparatus for efficiently performing plasma processing. The plasma processing apparatus includes: a chamber; a substrate support disposed within the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF signal generator electrically connected to the upper electrode or the lower electrode, configured to generate an RF signal for generating plasma within the chamber; a voltage signal generator electrically connected to the lower electrode, configured to generate a voltage signal having a sequence of voltage pulses; a rectifier element electrically connected between a ground potential and the upper electrode; and a voltage phase adjustment element electrically connected in series with the rectifier element between the ground potential and the upper electrode.

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