Plasma treatment methods and methods for inspecting patterns in metal films

TW202636501APending Publication Date: 2026-09-01HITACHI HIGH TECH CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW115119081
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-11-02
Filing Date
2024-07-30
Publication Date
2026-09-01

Smart Images

  • Figure TWG2TA001075407_001
    Figure TWG2TA001075407_001
  • Figure TWG2TA001075407_002
    Figure TWG2TA001075407_002
  • Figure TWG2TA001075407_003
    Figure TWG2TA001075407_003
Patent Text Reader

Abstract

One embodiment of the present invention comprises a plasma processing method for forming a pattern of a metal film, comprising: a first step (S1) in which information on the roughness and size of the mask pattern and the grain size of the metal film is obtained by using an image of a mask pattern obtained by electron beams; a third step (S2) in which etching conditions of the metal film are specified according to the allowable roughness value of the pattern of the metal film; and a fourth step (S3 to S7) in which the metal film is etched using the specified etching conditions of the metal film.
Need to check novelty before this filing date? Find Prior Art