Semiconductor device

Abstract

Provided is a semiconductor device including a substrate having an active region formed thereon, a gate stack on the active region, a circuit wiring disposed above the gate stack, and a contact via structure located on a side surface of the gate stack located between the active region and the circuit wiring. The contact via structure includes a gate contact via extending between the circuit wiring and the active region, a first contact insulating film covering a portion of a side surface of the gate contact via and exposing a remaining portion of the side surface, and a second contact insulating film covering a portion of a side surface of the first contact insulating film and exposing a remaining portion of the side surface, and exposing a remaining portion of the side surface of the gate contact via.

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