Memory cell array and memory device including thereof
TW202636739APending Publication Date: 2026-09-01SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- TW114133439
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-17
- Filing Date
- 2025-09-01
- Publication Date
- 2026-09-01
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Figure TWG2TA001074281_001 
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Abstract
A memory cell array may include a first memory cell including a first transistor structure and a first capacitor structure, a second memory cell including a second transistor structure and a second capacitor structure, and a first wordline contact connected to the first transistor structure and the second transistor structure, wherein the first capacitor structure is spaced apart from the first transistor structure in a first direction, and the second capacitor structure is spaced apart from the second transistor structure in a second direction different from the first direction.
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