HBM Semiconductor Memory Device and its Manufacturing Method

Abstract

This invention provides a semiconductor memory device for HBM comprising a substrate having a semiconductor memory element region, wherein: the aforementioned substrate is: a carbon-doped silicon substrate, and the aforementioned semiconductor memory element region is formed on the surface of the carbon-doped silicon substrate; or it comprises a carbon-doped first silicon substrate and an undoped second silicon substrate located on the carbon-doped first silicon substrate, and the aforementioned semiconductor memory element region is formed on the surface of the undoped second silicon substrate. This provides a semiconductor memory device for HBM capable of suppressing cracking. none

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