Semiconductor memory devices and semiconductor devices

Abstract

An embodiment provides a semiconductor memory device and a semiconductor device capable of manufacturing high-quality semiconductor devices. The semiconductor memory device of this embodiment includes: an oxide semiconductor extending in a vertical direction; a first electrode comprising a first conductor containing a first oxide conductive material and connected to the upper end of the oxide semiconductor; a gate electrode, separated by a gate insulating film and facing the oxide semiconductor; a second electrode disposed below the oxide semiconductor and extending in the vertical direction; a dielectric layer disposed on the outer peripheral surface of the second electrode; and a third electrode disposed on the outer peripheral surface of the dielectric layer. The second electrode comprises a second conductor containing a second oxide conductive material and connected to the lower end of the oxide semiconductor, and has an facing surface that faces the inner peripheral surface of the third electrode across the dielectric layer.

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