Structure containing semiconductor memory device and method for manufacturing semiconductor memory device

Abstract

This invention relates to a structure containing a semiconductor memory device and a method for manufacturing the semiconductor memory device. The structure comprising: a silicon substrate; an oxygen delta-doped layer on the silicon substrate; a silicon epitaxial layer on the oxygen delta-doped layer; and a semiconductor memory device formed on the silicon epitaxial layer. The method for manufacturing the semiconductor memory device involves irradiating the silicon substrate with a laser and then peeling off the silicon substrate from the oxygen delta-doped layer. This provides a structure containing a semiconductor memory device and a method for manufacturing the semiconductor memory device, which can be easily thin-film sizing. none

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