Memory elements

Abstract

This invention improves the voltage withstand capability of transistors. One embodiment of a memory element includes: a first region, a third region, and a second region disposed within a substrate and arranged sequentially and separately in a first direction, each containing impurities of a first conductivity type; a fourth region disposed within the third region and containing impurities of a second conductivity type different from the first conductivity type; a first conductor layer disposed above the first region and having a first opening; a second conductor layer disposed above the second region and having a second opening; a first contact portion connected to the first region and passing through the first opening; a second contact portion connected to the second region and passing through the second opening; a first memory cell connected to the first contact portion; and a second memory cell connected to the second contact portion.

Images