Semiconductor devices and methods for manufacturing semiconductor devices

Abstract

The objective of this invention is to improve the crystallinity of the channel layer. A semiconductor device according to an embodiment includes: a stack body formed by alternatingly stacking a plurality of conductive layers and a plurality of insulating layers; and a pillar extending within the stack body along the stacking direction; and the pillar having: a first semiconductor layer extending within the stack body along the stacking direction; and a second semiconductor layer protruding from a sidewall of the first semiconductor layer toward the first insulating layer at least near the center of the first insulating layer in the stacking direction among the plurality of insulating layers.

Images