Semiconductor devices and manufacturing methods thereof

Abstract

An embodiment provides a semiconductor device with reduced number of steps and a method for manufacturing the same. The semiconductor device based on this embodiment includes a first laminate and a plurality of first pillars. In the first laminate, a first insulating film and a first conductive film are alternately laminated in a first direction. The plurality of first pillars extend in the first direction through the first laminate and include a conductor electrically connected to any one of the first conductive films. The first laminate has a plurality of protruding structures projecting in the first direction at its lower portion, within the first laminate, or both, depending on the shape of a plurality of trenches. The first pillars are electrically connected to the first conductive film by penetrating the concave portion of the first conductive film inside the trench structure.

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