Magnetoresistive stacks and methods therefor

TW202636765APending Publication Date: 2026-09-01EVERSPIN TECHNOLOGIES INC
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Patent Information

Application Number
TW114144084
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-11-14
Filing Date
2025-11-12
Publication Date
2026-09-01

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Abstract

A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a layer including boron and a non-boron magnetic material positioned proximate a boron-free ferromagnetic layer.
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