Heat-flow controlled phase change material device with sidewall liners and methods for forming the same

Abstract

A device structure may be formed by: forming bottom electrodes and heater elements within a dielectric material layer; forming layer stacks of a respective bottom liner, a respective phase change material portion, and a respective top electrode; and forming sidewall liners on layer stacks, wherein each contiguous combination of a respective one of the bottom electrodes, a respective one of the heater elements, a respective one of the layer stack, and a respective sidewall liner selected from the sidewall liners constitutes a phase change memory cell, whereby a plurality of phase change memory cells is formed. A first subset of the plurality of phase change memory cells is configured to generate a first temperature gradient along a first lateral direction.

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