Semiconductor memory devices

Abstract

According to one embodiment, a semiconductor memory device includes a first memory transistor, a second transistor, and a first wiring. It also includes a second wiring, a third wiring, and a fourth wiring connected to the gate electrodes of the first memory transistor, the first transistor, and the second transistor. From the first time point of the deletion operation to the second time point thereafter, the voltage of the first wiring increases from the first voltage to a second voltage greater than the voltages of the second to fourth wirings. From the second time point to the third time point thereafter, the voltage of the first wiring increases from the second voltage to a third voltage, and the voltage of the third wiring increases from the fourth voltage to a fifth voltage greater than the voltages of the second and fourth wirings but less than the third voltage.

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