Capacitor structure and semiconductor device including the capacitor structure
TW202636772APending Publication Date: 2026-09-01SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- TW114149738
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-24
- Filing Date
- 2025-12-17
- Publication Date
- 2026-09-01
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Abstract
An example capacitor structure includes a lower electrode structure, a dielectric pattern and an upper electrode. The lower electrode structure includes a first lower electrode on a substrate, and a second lower electrode on a sidewall of the first lower electrode. The second lower electrode includes an alloy of a first metal and a second metal. The dielectric pattern is disposed on a surface of the lower electrode structure. The upper electrode is disposed on a surface of the dielectric pattern. The second lower electrode has a thickness varying in a vertical direction perpendicular to an upper surface of the substrate. A weight ratio between the first metal and the second metal is uniform in the vertical direction in the second lower electrode.
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