Capacitor structure and semiconductor device including the capacitor structure

TW202636772APending Publication Date: 2026-09-01SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW114149738
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-24
Filing Date
2025-12-17
Publication Date
2026-09-01

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Abstract

An example capacitor structure includes a lower electrode structure, a dielectric pattern and an upper electrode. The lower electrode structure includes a first lower electrode on a substrate, and a second lower electrode on a sidewall of the first lower electrode. The second lower electrode includes an alloy of a first metal and a second metal. The dielectric pattern is disposed on a surface of the lower electrode structure. The upper electrode is disposed on a surface of the dielectric pattern. The second lower electrode has a thickness varying in a vertical direction perpendicular to an upper surface of the substrate. A weight ratio between the first metal and the second metal is uniform in the vertical direction in the second lower electrode.
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