Transistor device and manufacturing method thereof

TW202636780APending Publication Date: 2026-09-01PROASIA SEMICONDUCTOR CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114106126
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-02-19
Publication Date
2026-09-01

Smart Images

  • Figure TWG2TA001073744_001
    Figure TWG2TA001073744_001
  • Figure TWG2TA001073744_002
    Figure TWG2TA001073744_002
  • Figure TWG2TA001073744_003
    Figure TWG2TA001073744_003
Patent Text Reader

Abstract

A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, an epitaxial composite layer, a gate trench, a source trench, and a boron atom doped interface. The epitaxial composite layer is disposed on the silicon carbide substrate. The gate trench is disposed in the epitaxial composite layer. The source trench is adjacent to the gate trench and disposed in the epitaxial composite layer. The boron atom doped interface is disposed between the source trench and the epitaxial composite layer.
Need to check novelty before this filing date? Find Prior Art