Transistor and silicon carbide transistor
TW202636791APending Publication Date: 2026-09-01SEMICON COMPONENTS IND LLC
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Patent Information
- Application Number
- TW114126078
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-24
- Filing Date
- 2025-07-10
- Publication Date
- 2026-09-01
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Abstract
A transistor is disclosed. The transistor includes a gate runner coupled to a gate of the transistor. The transistor also includes a source region and a silicide layer coupling a source metal to the source region. The silicide layer includes a silicide contact area located under the source metal and coupling the source metal to a first portion of the source region under the source metal, and a silicide extension area located under an insulator and providing a lateral coupling from the source metal to a second portion of the source region located under the insulator.
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