Semiconductor device

TW202636794APending Publication Date: 2026-09-01SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW114144140
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-17
Filing Date
2025-11-12
Publication Date
2026-09-01
Patent Text Reader

Abstract

A semiconductor device is described including a substrate with a cell active pattern, a cell gate structure positioned on the cell active pattern, and a bit line structure connected to the cell active pattern. The cell gate structure includes a cell gate insulating layer positioned on the cell active pattern, a cell gate conductive layer positioned on the cell gate insulating layer, and a cell gate capping layer positioned on the cell gate conductive layer and including an insulating material and hydrogen.
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