Integrated circuit device and forming method thereof

Abstract

In accordance with some disclosed embodiments, an IC device includes a first power rail, a second power rail, and a third power rail. A plurality of active regions extend over the substrate and a plurality of conductive contacts extend over the first active region and the second active region. A first via is connected to the first conductive contact and the third power rail. A second via is connected to the second conductive contact and the third power rail. A first portion of the first conductive contact on the second side of the third power rail is electrically disconnected from the first via, and a second portion of the second conductive contact on the first side of the third power rail is electrically disconnected from the second via.

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