Semiconductor devices

Abstract

A semiconductor device includes a base structure extending in a first direction; gate electrodes disposed on the base structure, extending in a second direction, and spaced apart from each other in the first direction and the second direction; a plurality of channel layers disposed on the base structure, spaced apart from each other in a third direction, and surrounded by the gate electrodes; source / drain regions connected to the plurality of channel layers on opposite sides of the gate electrodes; an isolation structure separating the gate electrodes, the plurality of channel layers, and the source / drain regions in the second direction, and extending in the first direction; and a gate connection layer electrically connecting a first gate electrode and a second gate electrode spaced apart from each other in a fourth direction, the gate connection layer disposed on the isolation structure and contacting an upper surface thereof.

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