Semiconductor device
TW202636805APending Publication Date: 2026-09-01SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- TW114133541
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-18
- Filing Date
- 2025-09-02
- Publication Date
- 2026-09-01
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Figure TWG2TA001074282_001 
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Abstract
A semiconductor device inventive concept comprises a first channel pattern and a second channel pattern spaced apart from each other on a substrate, a separation structure between the first channel pattern and the second channel pattern, and a gate electrode on the first channel pattern, the second channel pattern and the separation structure. The separation structure comprises a first pattern adjacent to the first channel pattern and the second channel pattern, and a second pattern between the first channel patterns and the second channel patterns. A portion of an upper surface of the first pattern is located at a higher level than an upper surface of a second pattern.
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