Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a first active region including a first channel region and two first source / drain regions sandwiching the first channel region, a second active region including a second channel region and two second source / drain regions sandwiching the second channel region, an isolation structure extending from a first sidewall of the first active region to a second sidewall of the second active region, and a gate structure extending across the first and second channel regions. The gate structure includes a gate dielectric layer and a gate electrode layer. The gate electrode layer includes a first segment of a first conductivity type over the first channel region and a second segment of a second conductivity type over the second channel region. The semiconductor device also includes a backside gate contact extending through the gate dielectric layer and interfacing a bottom surface of the gate electrode layer.

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