Semiconductor device

Abstract

A semiconductor device includes a plurality of upper sheet patterns spaced apart from one another in a first direction on a first separation insulating layer, a first gate electrode surrounding the plurality of upper sheet patterns and extending in a second direction, a second gate electrode spaced apart from the first gate electrode in the second direction, a lower source / drain pattern disposed on one side of the first separation insulating layer, a first upper source / drain pattern disposed on one side of the plurality of upper sheet patterns, a first through contact and penetrating at least a portion of the first upper source / drain pattern and at least a portion of the lower source / drain pattern, and a first lower gate contact disposed on a lower surface of the second gate electrode and extending in the second direction, wherein the first lower gate contact is electrically connected to the first through contact.

Images