Light-emitting device

Abstract

A light-emitting device is provided. The light-emitting device includes a substrate, a light-emitting element, an encapsulating layer and a light-modulating structure. The light-emitting element is disposed on the substrate. The light-emitting element includes a light-emitting surface. In a top-view diagram, the light-emitting surface has a diagonal length. The encapsulating layer covers the light-emitting element. The encapsulating layer has a light-emitting surface and the light-emitting surface is arc-shaped. The light-modulating structure is disposed on the light-emitting surface of the encapsulating layer. The light-modulating structure includes at least one light-modulating layer. An arc length of the at least one light-modulating layer is greater than the diagonal length of the light-emitting surface.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device. Prior Technology

[0002] Light-emitting diodes (LEDs) have advantages such as small size, high brightness, and low power consumption, and have been widely used in light-emitting devices.

[0003] However, the continuous miniaturization of light-emitting diodes (LEDs) has led to some unresolved challenges in their manufacturing process, which in turn affects the performance of light-emitting devices. For example, current LED packaging structures still suffer from problems such as limited emission angle, uneven brightness, and poor module quality.

[0004] Therefore, how to further improve the light-emitting device of the light-emitting diode to enhance its performance remains one of the research topics that the industry is currently committed to. Summary of the Invention

[0005] According to some embodiments disclosed herein, a light-emitting device is provided, comprising a substrate, a light-emitting element, an encapsulation layer, and a dimming structure. The light-emitting element is disposed on the substrate and includes a light-emitting surface, which, in a top view, has a diagonal length. The encapsulation layer covers the light-emitting element and has a light-emitting surface that is arc-shaped. The dimming structure is disposed on the light-emitting surface of the encapsulation layer and includes at least one dimming layer, which has an arc length greater than the diagonal length of the light-emitting surface of the light-emitting element.

[0006] To make the features or advantages of this disclosure more apparent and understandable, some embodiments are described below in detail with reference to the accompanying drawings. Simple Explanation of the Diagram

[0007] Figure 1 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 2 shows a top view of the light-emitting element of the light-emitting device according to some embodiments of the present disclosure; Figure 3 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 4 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 5 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 6 shows a top view of the dimming layer of the dimming structure according to some embodiments of this disclosure. Figure 7A shows a measurement diagram of the light spot of the light-emitting device and an image of the module in a comparative example; Figure 7B shows a light spot measurement diagram of the light-emitting device and a module image diagram according to some embodiments of the present disclosure; Figure 8 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 9 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 10 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 11 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 12 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 13 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 14 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 15 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 16 shows a cross-sectional structural schematic diagram of the light-emitting device according to some embodiments of the present disclosure; Figure 17 shows a comparison of the brightness distribution of the light-emitting device according to a comparative example and some embodiments of this disclosure; Figure 18 shows a schematic diagram of a backlight module according to some embodiments of the present disclosure. Implementation

[0008] The following provides a detailed description of the light-emitting device according to embodiments of this disclosure. It should be understood that the following description provides many different embodiments for implementing various forms of some embodiments of this disclosure. The specific elements and arrangements described below are merely for simple and clear description of some embodiments of this disclosure. Of course, these are only examples and not limitations of this disclosure. Furthermore, similar and / or corresponding reference numerals may be used in different embodiments to identify similar and / or corresponding elements for clear description of this disclosure. However, the use of these similar and / or corresponding reference numerals is only for simple and clear description of some embodiments of this disclosure and does not represent any relationship between the different embodiments and / or structures discussed.

[0009] It should be understood that relative terms, such as "lower," "bottom," "higher," or "top," may be used in the embodiments to describe the relative relationship of one element to another in the diagram. It is understood that if the arrangement in the diagram is flipped upside down, an element depicted on the "lower" side will become an element on the "higher" side. This disclosure should be understood in conjunction with the drawings, which are considered part of the disclosure. It should be understood that the drawings in this disclosure are not drawn to scale; in fact, the dimensions of the elements may be arbitrarily enlarged or reduced to clearly show the features of this disclosure.

[0010] Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it may include situations where the first material layer and the second material layer are in direct contact, or situations where the first material layer and the second material layer are not in direct contact, that is, situations where there may be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is located directly on the second material layer, it indicates that the first material layer and the second material layer are in direct contact.

[0011] Furthermore, it should be understood that the ordinal numbers "first," "second," and similar terms mentioned in the specification or claims of this case are used to name different elements or distinguish different embodiments or scopes, and are not used to limit the upper or lower limit of the number of elements, nor to limit the manufacturing order or the order of installation of the elements.

[0012] In some embodiments disclosed herein, terms such as "setup," "connection," and similar terms, unless specifically defined, may refer to two components in direct contact, or to two components not in direct contact, wherein an additional connecting component is located between the two structures. Terms such as "setup" and "connection" may also include cases where both structures are movable or both structures are fixed.

[0013] In this document, the terms "about," "approximately," and "substantially" generally mean within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The terms "range greater than or equal to the first value and less than or equal to the second value" or "range between the first and second values" indicate that the range includes the first value, the second value, and other values ​​in between.

[0014] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that these terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this disclosure.

[0015] According to embodiments of this disclosure, the provided light-emitting device includes a dimming structure configured in a specific manner, thereby improving the light spot performance of the light-emitting element and enhancing the module's overall quality. Furthermore, according to some embodiments of this disclosure, the dimming structure exhibits good structural stability and is not easily peeled off from the encapsulation layer due to external forces. According to some embodiments of this disclosure, the dimming structure includes multiple dimming layers configured in a specific size ratio, thereby improving the luminous efficiency and luminous uniformity of the light-emitting element.

[0016] According to some embodiments of this disclosure, the light-emitting device described below can be applied to backlight modules (such as backlight modules for displays or backlight modules for automotive dashboards), lighting modules, automotive light-emitting modules, etc., but this disclosure is not limited thereto.

[0017] Please refer to Figure 1, which shows a cross-sectional schematic diagram of the light-emitting device 10A according to some embodiments of this disclosure. It should be understood that, for clarity, some elements of the light-emitting device may be omitted in the figure, and only some elements are schematically depicted. According to some embodiments, additional features may be added to the light-emitting device described below. According to some embodiments, some features of the light-emitting device described below may be replaced or omitted.

[0018] As shown in Figure 1, the light-emitting device 10A may include a substrate 102, a light-emitting element 104, an encapsulation layer 106, and a dimming structure CS.

[0019] Substrate 102 is a substrate with conductive lines (not shown) that are electrically connected to the light-emitting element 104 and to an external power source, thereby transferring externally supplied current to the light-emitting element 104. According to some embodiments, substrate 102 comprises a flexible substrate, a rigid substrate, or a combination thereof. According to some embodiments, the material of substrate 102 may include glass, quartz, sapphire, ceramic, plastic, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or combinations thereof, but is not limited thereto. Furthermore, substrate 102 may be a transparent substrate, a semi-transparent substrate, or an opaque substrate. According to some embodiments, substrate 102 may be a printed circuit board (PCB).

[0020] The light-emitting element 104 may be disposed on the substrate 102 and electrically connected to the conductive lines of the substrate 102. The light-emitting element 104 includes a light-emitting diode, such as a sub-millimeter light-emitting diode (mini-LED). According to some embodiments, the light-emitting element 104 may be electrically connected to a driving element (not shown) disposed on the substrate 102. The driving element may include, for example, a thin-film transistor (TFT) or an integrated circuit (IC), but this disclosure is not limited thereto. According to some embodiments, the light-emitting element 104 may emit blue light, red light, green light, or other suitable colors of light, but this disclosure is not limited thereto. According to some embodiments, the light-emitting element 104 may be a flip-chip light-emitting diode.

[0021] Furthermore, please refer to Figure 2, which shows a top view of the light-emitting element 104 of the light-emitting device 10A according to some embodiments of this disclosure. As shown in Figure 2, the light-emitting element 104 includes a light-emitting surface 104s, and in the top view, the light-emitting surface 104s has a diagonal length Ld. In addition, the light-emitting surface 104s may have a length L and a width W. According to some embodiments, in the top view, the light-emitting element 104 may be rectangular, and the diagonal length Ld of the light-emitting surface 104s may be the diagonal length of the rectangle, that is, the diagonal length Ld is the square root of the sum of the square of the length L and the square of the width W of the light-emitting surface 104s. However, this disclosure is not limited thereto. According to other embodiments, in a top view, the light-emitting element 104 may be circular, elliptical, or other suitable shapes. In embodiments where the light-emitting element 104 is circular, elliptical, or other shapes, the diagonal length Ld may be defined as the diagonal length of the smallest rectangle that can be encircled by that shape.

[0022] Referring again to Figure 1, the encapsulation layer 106 can cover the light-emitting element 104. The encapsulation layer 106 has a light-emitting surface 106e, which is arc-shaped. According to some embodiments, the encapsulation layer 106 can contact the top surface (e.g., including the light-emitting surface 104s) and side surfaces of the light-emitting element 104. The encapsulation layer 106 can protect the light-emitting element 104, for example, by providing moisture protection or insulation, thereby improving the reliability of the overall structure. Furthermore, there is an angle θ1 between the light-emitting surface 106e and the bottom surface 106b of the encapsulation layer 106, and the angle θ1 between the light-emitting surface 106e and the bottom surface 106b can be less than or equal to 90 degrees. In detail, according to the embodiments disclosed herein, the aforementioned angle θ1 refers to the angle between the tangent of the light-emitting surface (arc surface) 106e of the encapsulation layer 106 and the bottom surface 106b.

[0023] The encapsulation layer 106 may comprise a photocurable adhesive, a thermocurable adhesive, a photothermal curable adhesive, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the encapsulation layer 106 may comprise optically clear adhesive (OCA), optically clear resin (OCR), other suitable materials, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the encapsulation layer 106 may comprise silicone. The encapsulation layer 106 may be transparent or translucent. According to some embodiments, the encapsulation layer 106 may comprise diffusing particles. According to some embodiments, the diffusing particles may comprise inorganic particles, organic polymer particles, or a combination thereof. For example, inorganic particles may comprise silicon oxide, titanium oxide, titanium dioxide, aluminum oxide, calcium carbonate, barium sulfate, boron nitride, zirconium dioxide, or any combination thereof, but this disclosure is not limited thereto. For example, inorganic particles may comprise solid silicon dioxide or hollow silicon dioxide, or any combination thereof, but this disclosure is not limited thereto. For example, the organic polymer particles may comprise polymethyl methacrylate (PMMA), polystyrene (PS), acrylonitrile-butadiene-styrene copolymer (ABS), polyurethane (PU), or any combination thereof, but this disclosure is not limited thereto. According to some embodiments, the encapsulation layer 106 may contain phosphors or quantum dots or a combination of phosphors and quantum dots.

[0024] Referring to Figure 1, the dimming structure CS can be disposed on the light-emitting surface 106e of the encapsulation layer 106. The dimming structure CS includes at least one dimming layer Cx, and the dimming layer Cx has an arc length greater than the diagonal length Ld of the light-emitting surface 104s of the light-emitting element 104. Furthermore, the dimming layer Cx can be stacked on the light-emitting surface 106e of the encapsulation layer 106, and its position is directly above the light-emitting element 104. In some embodiments, the dimming layer Cx includes a light-shielding layer stack structure, which is positioned above the light-emitting element 104 and on the light-emitting surface 106e of the encapsulation layer 106. The light-shielding layer stack structure includes a plurality of light-shielding layers, and the middle thickness of the light-shielding layer stack structure is greater than the end thickness of the light-shielding layer stack structure. In the light-shielding layer stack structure, the light-shielding layers have different sizes, for example, different arc lengths, and the arc length of each light-shielding layer is greater than the diagonal length Ld of the light-emitting surface 104s. Furthermore, as they move further away from the light-emitting surface by 104s, these light-shielding layers can be stacked from large to small or from small to large.

[0025] As shown in Figure 1, taking the dimming layer Cx as an example, which includes two stacked light-shielding layers, the stacked light-shielding layer structure includes a light-shielding layer 108a and a light-shielding layer 108b, with the light-shielding layer 108b disposed on the light-shielding layer 108a. Specifically, in this embodiment, the light-shielding layer 108a partially covers the light-emitting surface 106e of the encapsulation layer 106 and has an arc length D108a, which is greater than the diagonal length Ld of the light-emitting surface 104s; the light-shielding layer 108b is stacked on the surface of the light-shielding layer 108a and has an arc length D108b, where the arc length D108a is greater than the arc length D108b, and the arc length D108b is also greater than the diagonal length Ld of the light-emitting surface 104s. Specifically, the arc length D108a is the arc length of the upper surface of the light-shielding layer 108a, and the arc length D108b is the arc length of the upper surface of the light-shielding layer 108b. According to other embodiments, the arc length of one of the light-shielding layers 108a and 108b is greater than the diagonal length Ld of the light-emitting surface 104s, while the arc length of the other of the light-shielding layers 108a and 108b may be less than the diagonal length Ld of the light-emitting surface 104s. According to some embodiments, from a top view, the shapes of the light-shielding layers 108a and 108b may include circular, elliptical, rectangular, irregular, or other suitable shapes, but are not limited thereto. Furthermore, the shapes of the light-shielding layers 108a and 108b may be approximately the same, identical, or different.

[0026] Furthermore, as shown in Figure 1, the ends of light-shielding layers 108a and 108b may have a thickness gradient structure. Specifically, light-shielding layers 108a and 108b may each have a main portion mp and an end portion ep connected to the main portion mp. The arc length Da-1 of the main portion mp of light-shielding layer 108a is greater than the arc length Da-2 of the end portion ep, and the arc length Db-1 of the main portion mp of light-shielding layer 108b is greater than the arc length Db-2 of the end portion ep. Specifically, the main portion mp of light-shielding layer 108a has an upper surface arc length Da-1, while the end portion ep of light-shielding layer 108a has an upper surface arc length Da-2; the main portion mp of light-shielding layer 108b has an upper surface arc length Db-1, while the end portion ep of light-shielding layer 108b has an upper surface arc length Db-2. The upper surface arc length D108a of the light-shielding layer 108a can be composed of the upper surface arc length Da-1 of the main part mp and the upper surface arc length Da-2 of the end part ep; the upper surface arc length D108b of the light-shielding layer 108b can be composed of the upper surface arc length Db-1 of the main part mp and the upper surface arc length Db-2 of the end part ep. Furthermore, the thickness Tmp-1 of the main part mp of the light-shielding layer 108a can be greater than the thickness Tep-1 of the end part ep, and the thickness Tmp-2 of the main part mp of the light-shielding layer 108b can be greater than the thickness Tep-2 of the end part ep. According to some embodiments, the thickness of the main part mp of the light-shielding layer 108a can be substantially uniform. According to some embodiments, the thickness of the main part mp of the light-shielding layer 108a on both sides near the end part ep can be slightly less than the thickness of the middle portion of the main part mp.

[0027] Furthermore, according to some embodiments, the end ep of the light-shielding layer 108a adjacent to the surface of the main part mp may have a chamfer θa-1 between the surface and the surface of the main part mp, and the end ep of the light-shielding layer 108a away from the surface of the main part mp and the surface of the encapsulation layer 106 may have an included angle θa-2, and the chamfer θa-1 is greater than the included angle θa-2. According to some embodiments, the chamfer θa-1 may be between 0 degrees and 90 degrees, and the included angle θa-2 may be between 0 degrees and 90 degrees. Similarly, according to some embodiments, the end ep of the light-shielding layer 108b adjacent to the surface of the main part mp may have a chamfer θb-1 between the surface and the surface of the main part mp, and the end ep of the light-shielding layer 108a away from the surface of the main part mp and the surface of the light-shielding layer 108a may have an included angle θb-2, and the chamfer θb-1 is greater than the included angle θb-2. According to some embodiments, the range of the tangent angle θb-1 can be between 0 degrees and 90 degrees, and the range of the included angle θb-2 can be between 0 degrees and 90 degrees.

[0028] According to the embodiments disclosed herein, the aforementioned end portion ep can be defined as approximately one-fifth or one-quarter of the total arc length measured inward from the edge of the light-shielding layer 108a (or light-shielding layer 108b), while the main portion mp corresponds to the portion of the light-shielding layer 108a (or light-shielding layer 108b) minus the portions at both ends ep. Furthermore, the aforementioned thicknesses T mp-1 and T mp-2 can be the thicknesses measured at any point in the main portion mp, and the aforementioned thicknesses T ep-1 and T ep-2 can be the thicknesses measured at any point in the end portion ep.

[0029] The materials of light-shielding layers 108a and 108b may include reflective materials, such as high-reflectivity materials with a reflectivity greater than 90%. According to some embodiments, light-shielding layers 108a and 108b may have a matrix and a high-reflectivity material disposed on the surface of the matrix or within the matrix. According to some embodiments, the matrix material may include organic materials, such as epoxy resins, silicone, acrylic resins such as polymethyl methacrylate (PMMA), benzocyclobutene (BCB), polyimide, polyester, polydimethylsiloxane (PDMS), polyethylene terephthalate (PET), polycarbonate (PC), other suitable materials, or combinations thereof, but not limited to these. According to some embodiments, the high reflectivity material may include a white reflective material, making the light-shielding layers 108a and 108b appear white. The white reflective material may be an oxide, such as titanium dioxide (TiO₂), zirconium oxide (ZrO₂), zinc oxide (ZnO), silicon dioxide (SiO₂), or aluminum oxide (Al₂O₃). According to some embodiments, the high reflectivity material may include silver (Ag), aluminum (Al), titanium (Ti), other suitable materials, or combinations thereof, but is not limited thereto. According to some embodiments, the high reflectivity material may include a thermosetting high reflectivity silicone resin, but is not limited thereto. According to some embodiments, the light-shielding layers 108a and 108b may be partially reflective and partially transmissive.

[0030] According to some embodiments, the light-shielding layer 108a and the light-shielding layer 108b can be formed by printing processes such as screen printing or inkjet printing, coating processes, deposition processes, vapor deposition processes, sputtering processes, other suitable processes, or combinations thereof. According to some embodiments, the light-shielding layer 108a and the light-shielding layer 108b can be formed by inkjet printing.

[0031] It is worth noting that the dimming structure CS with the aforementioned configuration (e.g., including a light-shielding layer 108a and a light-shielding layer 108b as a dimming layer Cx, or a light-shielding layer 108a and a light-shielding layer 108b with a specific main part mp and end part ep design) can improve the light spot performance of the light-emitting element 104 and enhance the overall module quality of the light-emitting device 10A.

[0032] Next, please refer to Figure 3, which shows a cross-sectional structural schematic diagram of the light-emitting device 10B according to some other embodiments of this disclosure. It should be understood that elements that are the same or similar to those described above will be indicated by the same or similar reference numerals in the following text, and their materials, features and functions are the same or similar to those described above, so this part will not be repeated in the following text.

[0033] As shown in Figure 3, the light-emitting device 10B is largely similar to the light-emitting device 10A. Compared to the light-emitting device 10A, the dimming structure CS of the light-emitting device 10B consists of only a single-layer light-shielding layer 108a stacked on the light-emitting surface 106e of the encapsulation layer 106 as the dimming layer Cx. In this embodiment, the dimming layer Cx is the light-shielding layer 108a, and the arc length D108a of the light-shielding layer 108a is greater than the diagonal length Ld of the light-emitting surface 104s, where the arc length D108a is the arc length of the upper surface of the light-shielding layer 108a. Similarly, the end ep of the light-shielding layer 108a may have a thickness gradient structure. In detail, the light-shielding layer 108a includes a main portion mp and an end portion ep. The main portion mp includes an upper surface arc length Da-1, and the end portion ep includes an upper surface arc length Da-2. The arc length Da-1 of the main portion mp is greater than the arc length Da-2 of the end portion ep. The thickness Tmp-1 of the main portion mp of the light-shielding layer 108a can be greater than the thickness Tep-1 of the end portion ep. That is, the upper surface arc length D108a of the light-shielding layer 108a is composed of the upper surface arc length Da-1 of the main portion mp and the upper surface arc length Da-2 of the end portion ep. Furthermore, according to some embodiments, the surface of the end portion ep of the light-shielding layer 108a adjacent to the surface of the main portion mp can have a chamfer θa-1, and the surface of the end portion ep of the light-shielding layer 108a away from the surface of the main portion mp and the surface of the encapsulation layer 106 can have an included angle θa-2, and the chamfer θa-1 is greater than the included angle θa-2.

[0034] Next, please refer to Figure 4, which shows a cross-sectional view of the light-emitting device 10C according to some other embodiments of this disclosure. As shown in Figure 4, the light-emitting device 10C is generally similar to the light-emitting device 10B. Compared with the light-emitting device 10B, the end ep of the light-shielding layer 108a of the light-emitting device 10C has two thickness gradient structures. The surfaces S1 and S2 corresponding to the two thickness gradient structures at the end ep of the light-shielding layer 108a may have different slopes. In detail, in this embodiment, the end ep of the light-shielding layer 108a adjacent to the surface S1 of the main part mp may have a chamfer θa-1 between the surface and the surface of the main part mp. The end ep of the light-shielding layer 108a further away from the two connecting surfaces S1 and S2 of the main part mp may have a chamfer θa-1'. The end ep of the light-shielding layer 108a further away from the surface S2 of the main part mp and the surface of the encapsulation layer 106 have an included angle θa-2. Both chamfer θa-1 and chamfer θa-1' are greater than the included angle θa-2, and the included angle θa-2 is greater than the chamfer θa-1'. According to some embodiments, the range of chamfer θa-1 may be between 0 degrees and 90 degrees, the range of chamfer θa-1' may be between 0 degrees and 90 degrees, and the range of included angle θa-2 may be between 0 degrees and 90 degrees.

[0035] It should be understood that although the illustrations only depict embodiments in which the end of the light-shielding layer has one or two thickness gradient structures, this disclosure is not limited thereto. According to some embodiments, the end of the light-shielding layer may have, for example, three, four, or five thickness gradient structures, but is not limited thereto.

[0036] Next, please refer to Figure 5, which shows a cross-sectional view of the light-emitting device 10D according to some embodiments of this disclosure. As shown in Figure 5, the light-emitting device 10D is generally similar to the light-emitting device 10A. Compared to the light-emitting device 10A, the dimming layer Cx of the light-emitting device 10D further includes a light-shielding layer 108c, which is disposed on the light-shielding layer 108b. The light-shielding layer 108c also partially covers the light-emitting surface 106e of the encapsulation layer 106 and has an arc length D108c. According to some embodiments, the arc length D108c of the light-shielding layer 108c is greater than the diagonal length Ld of the light-emitting surface 104s of the light-emitting element 104. According to some embodiments, the arc length D108c of the light-shielding layer 108c is equal to the diagonal length Ld of the light-emitting surface 104s. According to some embodiments, the arc length D108c of the light-shielding layer 108c is less than the diagonal length Ld of the light-emitting surface 104s. According to some embodiments, the shape of the light-shielding layer 108c may include a circle, an ellipse, a rectangle, an irregular shape, or other suitable shapes, but is not limited thereto. Furthermore, the shape of the light-shielding layer 108c may be the same as or different from the shapes of the light-shielding layers 108a and 108b. In addition, the ends of the light-shielding layer 108c may also have a thickness gradient structure similar to that of the aforementioned light-shielding layers 108a and 108b, and the material and manufacturing method of the light-shielding layer 108c may be the same as or similar to those of the aforementioned light-shielding layers 108a and 108b, which will not be repeated here.

[0037] Furthermore, it should be understood that although the illustrations only depict embodiments where the dimming structure CS includes one, two, or three light-shielding layers as the dimming layer Cx, this disclosure is not limited thereto. According to some embodiments, the dimming layer Cx has other numbers of light-shielding layers, such as four, five, six, or other suitable numbers of light-shielding layers.

[0038] Please refer to Figure 6, which shows a top view of the dimming layer Cx of the dimming structure CS of the light-emitting device according to some embodiments of this disclosure. As shown in Figure 6, according to some embodiments, the dimming layer Cx may be discontinuously distributed on the light-emitting surface 106e of the encapsulation layer 106. For example, according to some embodiments, the dimming layer Cx includes a light-shielding layer 108a and a light-shielding layer 108b. The light-shielding layer 108a partially covers the light-emitting surface 106e of the encapsulation layer 106 and corresponds to the light-emitting element (not shown). Similarly, the arc length D108a of the light-shielding layer 108a is greater than the diagonal length Ld of the light-emitting surface 104s, while the light-shielding layer 108b is disposed on the light-emitting surface 106e of the encapsulation layer 106 and surrounds the light-shielding layer 108a. The light-shielding layer 108b is a patterned light-shielding layer. According to some embodiments, the patterned light-shielding layer 108b may have a plurality of sub-parts. For example, in a top view, the light-shielding layer 108b may have a plurality of separate sub-parts, which may be arranged around the light-shielding layer 108a or a light-emitting element (not shown). According to some embodiments, the patterned light-shielding layer 108b may have a plurality of sub-parts that are circular, elliptical, rectangular, other suitable shapes, or combinations thereof. Furthermore, according to some embodiments, the light-shielding layer 108b may partially overlap with the light-shielding layer 108a.

[0039] Next, please refer to Figures 7A and 7B. Figure 7A shows a light spot measurement diagram and a module image of a light-emitting device in a comparative example. Figure 7B shows a light spot measurement diagram and a module image of a light-emitting device according to some embodiments of this disclosure. Specifically, Figure 7A shows a light spot measurement diagram of a light-emitting device using a single light-shielding layer as a dimming layer (e.g., as a comparative example) and an image result applied to a backlight module. Figure 7B shows a light spot measurement diagram of a light-emitting device using a double light-shielding layer as a dimming layer (e.g., light-emitting device 10A as shown in Figure 1) and an image result applied to a backlight module. The light spot in Figure 7B is more uniform than that in Figure 7A because the effect of multiple light-shielding layers helps to make the visual effect of the surface light source more uniform.

[0040] Please refer to Figure 8, which shows a cross-sectional view of the light-emitting device 10E according to some embodiments of this disclosure. As shown in Figure 8, the light-emitting device 10E is generally similar to the light-emitting device 10B. Compared with the light-emitting device 10B, the dimming layer Cx of the light-emitting device 10E further includes a protective layer 110. In this embodiment, the light-shielding layer 108a and the protective layer 110 can serve as the dimming layer Cx. The protective layer 110 can be disposed on the encapsulation layer 106 and cover the light-shielding layer 108a. The protective layer 110 can extend completely over the light-emitting surface 106e of the encapsulation layer 106. The protective layer 110 can completely cover the light-shielding layer 108a. According to some embodiments, the protective layer 110 can contact the top surface 108t and side surface 108s of the light-shielding layer 108a, and can contact the light-emitting surface 106e of the encapsulation layer 106 and the substrate 102.

[0041] According to some embodiments, the thickness T110 of the protective layer 110 may be greater than the thickness T108a of the light-shielding layer 108a (for example, it may be the thickness Tmp-1 of the main portion mp or the thickness Tep-1 of the end portion ep of the light-shielding layer 108a shown in Figure 1). Specifically, according to some embodiments, the thickness T110 of the protective layer 110 may be between 10 micrometers (μm) and 50 micrometers, for example, 15 micrometers, 20 micrometers, 25 micrometers, 30 micrometers, 35 micrometers, 40 micrometers, or 45 micrometers, but is not limited thereto. According to some embodiments, the thickness T108a of the light-shielding layer 108a may be between 10 micrometers and 200 micrometers. Furthermore, according to some embodiments, the hardness of the protective layer 110 is less than the hardness of the encapsulation layer 106. According to some embodiments, the viscosity of the protective layer 110 is less than the viscosity of the encapsulation layer 106. In addition, the refractive index of the protective layer 110 may be different from the refractive index of the light-shielding layer 108a. According to some embodiments, the refractive index of the protective layer 110 may be less than the refractive index of the light-shielding layer 108a. According to some embodiments, the refractive index of the protective layer 110 may be greater than the refractive index of the light-shielding layer 108a.

[0042] According to the embodiments disclosed herein, the aforementioned thickness T110 refers to the maximum thickness of the protective layer 110 on the encapsulation layer 106, and the aforementioned thickness T108a refers to the maximum thickness of the light-shielding layer 108a on the encapsulation layer 106.

[0043] The protective layer 110 may comprise a photocurable adhesive, a thermocurable adhesive, a photothermal curable adhesive, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the protective layer 110 may comprise an optically clear adhesive (OCA), an optically clear resin (OCR), other suitable materials, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the protective layer 110 may comprise silicone. The protective layer 110 may be transparent or translucent. Furthermore, the material of the protective layer 110 may be the same as or similar to that of the encapsulation layer 106.

[0044] According to some embodiments, the protective layer 110 can be formed by a printing process, a coating process, a deposition process, other suitable processes, or a combination thereof.

[0045] It is worth noting that the dimming structure CS with the aforementioned configuration (e.g., including a light-shielding layer 108a as a dimming layer Cx and a protective layer 110) can reduce the risk of the dimming structure CS separating from the encapsulation layer 106, making the dimming structure CS less likely to peel off from the encapsulation layer 106 due to external forces, thereby improving the reliability of the overall structure of the light-emitting device.

[0046] Furthermore, it should be understood that although Figure 8 and the following figures only show the dimming structure CS with a single light-shielding layer 108a, the dimming structure CS may also include multiple light-shielding layers as dimming layers Cx (as shown in Figure 1 or Figure 5).

[0047] Next, please refer to Figure 9, which shows a cross-sectional view of the light-emitting device 10F according to some other embodiments of this disclosure. As shown in Figure 9, the light-emitting device 10F is generally similar to the light-emitting device 10E. Compared with the light-emitting device 10E, the protective layer 110 in the light-emitting device 10F extends partially to the light-emitting surface 106e of the encapsulation layer 106. In this embodiment, the protective layer 110 can contact the top surface 108t and side surface 108s of the light-shielding layer 108a, and can contact the light-emitting surface 106e of the encapsulation layer 106, but does not contact the substrate 102. In this embodiment, the bottom surface 110b of the protective layer 110 and the light-emitting surface 106e of the encapsulation layer 106 have an included angle θ2, which is greater than 90 degrees and less than or equal to 150 degrees. For example, it can be 95 degrees, 100 degrees, 105 degrees, 110 degrees, 115 degrees, 120 degrees, 125 degrees, 130 degrees, 135 degrees, 140 degrees or 145 degrees, but is not limited to these.

[0048] According to some embodiments, the material of the protective layer 110 can be first coated onto the light-emitting surface 106e of the encapsulation layer 106, and a patterning step can be performed by one or more photolithography and / or etching processes to form the protective layer 110 having the aforementioned structure. According to some embodiments, the photolithography process may include photoresist coating (e.g., spin coating), soft baking, hard baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, and drying, but is not limited thereto. The etching process may include dry etching or wet etching, but is not limited thereto.

[0049] Please refer to Figure 10, which shows a cross-sectional view of the light-emitting device 10G according to some other embodiments of this disclosure. As shown in Figure 10, the light-emitting device 10G is generally similar to the light-emitting device 10E. Compared to the light-emitting device 10E, the protective layer 110 in the light-emitting device 10G partially extends to the light-emitting surface 106e of the encapsulation layer 106. In this embodiment, the protective layer 110 may contact the top surface 108t and side surface 108s of the light-shielding layer 108a, and may contact the light-emitting surface 106e of the encapsulation layer 106, but does not contact the substrate 102. In this embodiment, the bottom surface 110b of the protective layer 110 and the light-emitting surface 106e of the encapsulation layer 106 have an included angle θ3, which is greater than or equal to 30 degrees and less than 90 degrees. For example, it is 35 degrees, 40 degrees, 45 degrees, 50 degrees, 55 degrees, 60 degrees, 65 degrees, 70 degrees, 75 degrees, 80 degrees or 85 degrees, but is not limited to these.

[0050] Please refer to Figure 11, which shows a cross-sectional view of the light-emitting device 10H according to some other embodiments of this disclosure. As shown in Figure 10, the light-emitting device 10H is generally similar to the light-emitting device 10E. Compared to the light-emitting device 10E, the protective layer 110 in the light-emitting device 10H partially extends to the light-emitting surface 106e of the encapsulation layer 106. In this embodiment, the protective layer 110 can contact the top surface 108t and side surface 108s of the light-shielding layer 108a, and can contact the light-emitting surface 106e of the encapsulation layer 106, but does not contact the substrate 102. In this embodiment, there is an angle θ4 between the bottom surface 110b of the protective layer 110 and the light-emitting surface 106e of the encapsulation layer 106, and the angle θ4 is substantially equal to 90 degrees.

[0051] In light-emitting devices 10A to 10H, the light-emitting element 104 can emit blue light or white light. For example, the light-emitting element 104 includes a blue light-emitting diode. For example, the light-emitting element 104 includes a white light-emitting diode package structure, wherein the white light-emitting diode package structure includes a blue light-emitting diode and a wavelength conversion material. In some embodiments, the white light-emitting diode package structure is a chip-scale packaging (CSP) package structure, wherein the blue light-emitting diode is a flip-chip light-emitting diode, and the wavelength conversion material is coated along the surface of the blue light-emitting diode.

[0052] Next, please refer to Figure 12, which shows a cross-sectional view of the light-emitting device 10I according to some other embodiments of this disclosure. As shown in Figure 12, the light-emitting device 10I is generally similar to the light-emitting device 10B, but compared to the light-emitting device 10B, the light-emitting device 10I further includes a wavelength conversion layer 112 and a light-transmitting layer 107. In this embodiment, the light-shielding layer 108a, the light-transmitting layer 107, and the wavelength conversion layer 112 can serve as a dimming layer Cx. The light-transmitting layer 107 can be disposed on the encapsulation layer 106, the light-shielding layer 108a can partially cover the light-emitting surface of the light-transmitting layer 107 and has an arc length D108a, wherein the arc length D108a is greater than the diagonal length Ld of the light-emitting surface 104s, and the wavelength conversion layer 112 can be disposed between the light-transmitting layer 107 and the encapsulation layer 106, and the wavelength conversion layer 112 can extend completely on the light-emitting surface 106e of the encapsulation layer 106. In detail, the wavelength conversion layer 112 can contact the light-emitting surface 106e of the encapsulation layer 106 and the substrate 102. Furthermore, the wavelength conversion layer 112 has an arc length D112, which is greater than the diagonal length Ld of the light-emitting surface 104s.

[0053] The light-transmitting layer 107 can completely cover the wavelength conversion layer 112, and the light-transmitting layer 107 can contact the wavelength conversion layer 112 and the substrate 102. Furthermore, the side surface 107s of the light-transmitting layer 107 and the bottom surface 107b have an included angle θ5, and the included angle θ5 between the side surface 107s and the bottom surface 107b of the light-transmitting layer 107 can be less than or equal to 90 degrees. Specifically, according to the embodiments disclosed herein, the aforementioned included angle θ5 refers to the angle between the tangent of the side surface (arc surface) 107s of the light-transmitting layer 107 and the bottom surface 107b.

[0054] Furthermore, in this embodiment, the encapsulation layer 106 has a height H106 and a width W106, and the ratio of height H106 to width W106 can be greater than 0 and less than or equal to 0.5 (i.e., 0 < H106 / W106 ≤ 0.5), for example, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, or 0.45, but is not limited thereto. Moreover, in this embodiment, the light-transmitting layer 107 has a height H107 and a width W107, and the ratio of height H107 to width W107 can be greater than 0 and less than or equal to 0.5 (i.e., 0 < H107 / W107 ≤ 0.5), for example, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, or 0.45, but is not limited thereto. It is worth noting that when the height and width ratio of the encapsulation layer 106 to the light-transmitting layer 107 falls within the above range (0 < H106 / W106 ≤ 0.5 and 0 < H107 / W107 ≤ 0.5), the luminous efficiency and luminous uniformity of the light-emitting element 104 can be effectively improved.

[0055] According to the embodiments disclosed herein, the aforementioned height H106 refers to the maximum height of the encapsulation layer 106 in the direction normal to the substrate 102 (e.g., the Z direction in the diagram); the width W106 refers to the maximum width of the encapsulation layer 106 in the direction perpendicular to the normal to the substrate 102 (e.g., the X direction in the diagram). Similarly, the aforementioned height H107 refers to the maximum height of the light-transmitting layer 107 in the direction normal to the substrate 102 (e.g., the Z direction in the diagram); the width W107 refers to the maximum width of the light-transmitting layer 107 in the direction perpendicular to the normal to the substrate 102 (e.g., the X direction in the diagram).

[0056] The wavelength conversion layer 112 can convert the light generated by the light-emitting element 104 into light with a specific color or wavelength. The wavelength conversion layer 112 may have a matrix and one or more wavelength conversion materials dispersed in the matrix. According to some embodiments, the matrix may contain a polymer material, but is not limited thereto. According to some embodiments, the wavelength conversion material may contain phosphors, quantum dot materials, or combinations thereof, but is not limited thereto. Furthermore, according to some embodiments, the light-emitting element 104 may be a blue-emitting diode, and the wavelength conversion layer 112 may contain yellow phosphors. For example, the yellow phosphor may be yttrium aluminum garnet (YAG) phosphor, so the light-emitting device 10I can emit white light, but this disclosure is not limited thereto. According to some embodiments, the wavelength conversion layer 112 may contain red phosphors, green phosphors, phosphors of other suitable colors, or combinations thereof, but is not limited thereto. According to some embodiments, the wavelength conversion layer 112 may contain two different red phosphors, green phosphors, phosphors of other suitable colors, or combinations thereof, but is not limited thereto. According to some embodiments, the wavelength conversion layer 112 may include green phosphor and red phosphor. For example, the wavelength conversion layer 112 may include green phosphor β-SiAlON:Eu 2+ and red phosphor K 2SiF 6:Mn 4+. According to some embodiments, the wavelength conversion layer 112 may include a combination of green phosphor and two types of red phosphor. For example, the wavelength conversion layer 112 may include green phosphor β-SiAlON:Eu 2+, red phosphor K 2SiF 6:Mn 4+, and (Sr,Ca)AlSiN 3:Eu 2+.

[0057] The light-transmitting layer 107 protects the wavelength conversion layer 112, for example, by providing moisture protection or insulation, thereby improving the overall structural reliability. The light-transmitting layer 107 may comprise a photocurable adhesive, a thermocurable adhesive, a photothermal curable adhesive, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the light-transmitting layer 107 may comprise optically transparent adhesive (OCA), optically transparent resin (OCR), other suitable materials, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the light-transmitting layer 107 may comprise silicone. The light-transmitting layer 107 may be transparent or translucent. According to some embodiments, the light-transmitting layer 107 may comprise diffusing particles. According to some embodiments, the diffusing particles may comprise inorganic particles, organic polymer particles, or combinations thereof. For example, inorganic particles may comprise silicon oxide, titanium oxide, titanium dioxide, aluminum oxide, calcium carbonate, barium sulfate, boron nitride, zirconium dioxide, or any combination thereof, but this disclosure is not limited thereto. For example, inorganic particles may comprise solid silicon dioxide or hollow silicon dioxide or any combination thereof, but this disclosure is not limited thereto. For example, organic polymer particles may comprise polymethyl methacrylate (PMMA), polystyrene (PS), acrylonitrile-butadiene-styrene copolymer (ABS), polyurethane (PU), or any combination thereof, but this disclosure is not limited thereto.

[0058] Please refer to Figure 13, which shows a cross-sectional view of the light-emitting device 10J according to some other embodiments of this disclosure. As shown in Figure 13, the light-emitting device 10J is generally similar to the light-emitting device 10I. Compared with the light-emitting device 10I, the wavelength conversion layer 112 in the light-emitting device 10J does not cover the entire light-emitting surface 106e of the encapsulation layer 106, but only partially covers the light-emitting surface 106e of the encapsulation layer 106. In this embodiment, the wavelength conversion layer 112 can contact the light-emitting surface 106e of the encapsulation layer 106, but does not contact the substrate 102. Furthermore, the wavelength conversion layer 112 has an arc length D112, which can be greater than the diagonal length Ld of the light-emitting surface 104s.

[0059] Please refer to Figure 14, which shows a cross-sectional structural schematic of the light-emitting device 10K according to some embodiments of this disclosure. As shown in Figure 14, according to some embodiments, the light-emitting device 10K may include an encapsulation layer 106', which may contain a wavelength conversion material. In this embodiment, the encapsulation layer 106', the light-shielding layer 108a, and the light-transmitting layer 107 can serve as a dimming layer Cx. Compared to the light-emitting device 10I or the light-emitting device 10J, in this embodiment, an additional wavelength conversion layer 112 is not required, as the encapsulation layer 106' already has a wavelength conversion function, converting the light generated by the light-emitting element 104 into light with a specific color or a specific wavelength. The encapsulation layer 106' can contact the top surface (e.g., including the light-emitting surface 104s) and side surfaces of the light-emitting element 104. The encapsulation layer 106' can protect the light-emitting element 104, for example, by providing moisture protection or insulation, thereby improving the overall structural reliability. Furthermore, the light-emitting surface 106e' of the encapsulation layer 106' and the bottom surface can also have an included angle θ1, and the included angle θ1 between the light-emitting surface 106e' of the encapsulation layer 106' and the bottom surface can be less than or equal to 90 degrees.

[0060] In this embodiment, the encapsulation layer 106' has a height H106' and a width W106', and the ratio of height H106' to width W106' can be greater than 0 and less than or equal to 0.5 (i.e., 0 < H106' / W106' ≤ 0.5), for example, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, or 0.45, but is not limited thereto. It is worth noting that when the height and width ratio of the encapsulation layer 106' falls within the above range (0 < H106' / W106' ≤ 0.5), the luminous efficiency and luminous uniformity of the light-emitting element 104 can be effectively improved.

[0061] Please refer to Figure 15, which shows a cross-sectional view of the light-emitting device 10L according to some embodiments of this disclosure. As shown in Figure 15, the light-emitting device 10L is generally similar to the light-emitting device 10B, but compared to the light-emitting device 10B, the light-emitting device 10L further includes a wavelength conversion layer 112. In this embodiment, the light-shielding layer 108a and the wavelength conversion layer 112 can serve as a dimming layer Cx. The wavelength conversion layer 112 can be disposed on the encapsulation layer 106, and the wavelength conversion layer 112 can extend completely over the light-emitting surface 106e of the encapsulation layer 106. Furthermore, the light-shielding layer 108a can be disposed on the wavelength conversion layer 112 and partially cover the wavelength conversion layer 112. In detail, the wavelength conversion layer 112 can contact the light-emitting surface 106e of the encapsulation layer 106 and the substrate 102. Furthermore, the wavelength conversion layer 112 has an arc length D112, which is greater than the diagonal length Ld of the light-emitting surface 104s. In this embodiment, the arc length D112 of the wavelength conversion layer 112 is greater than the arc length D108a of the light-shielding layer 108a.

[0062] Please refer to Figure 16, which shows a cross-sectional view of the light-emitting device 10M according to some embodiments of this disclosure. As shown in Figure 16, the light-emitting device 10M is generally similar to the light-emitting device 10L, except that, compared to the light-emitting device 10L, the wavelength conversion layer 112 extends partially beyond the light-emitting surface 106e of the encapsulation layer 106. Furthermore, a light-shielding layer 108a may be disposed on the wavelength conversion layer 112 and completely cover the wavelength conversion layer 112. Specifically, the wavelength conversion layer 112 may partially contact the light-emitting surface 106e of the encapsulation layer 106, but does not contact the substrate 102. Furthermore, the wavelength conversion layer 112 has an arc length D112, which is greater than the diagonal length Ld of the light-emitting surface 104s. In this embodiment, the arc length D112 of the wavelength conversion layer 112 is less than the arc length D108a of the light-shielding layer 108a.

[0063] Next, please refer to Figure 17, which shows the comparison results of the brightness distribution of the light-emitting device according to a comparative example (Comparative Example 1, Comparative Example 2) and some embodiments disclosed herein (Examples 1, 2, and 3). Specifically, Comparative Example 1 is the brightness distribution result of a conventional light-emitting device without a dimming layer on the surface of the encapsulation layer; Comparative Example 2 is the brightness distribution result of a conventional light-emitting device with only a wavelength conversion layer on the surface of the encapsulation layer; Example 1 is the brightness distribution result of the light-emitting device 10I as shown in Figure 12; Example 2 is the brightness distribution result of the light-emitting device 10K as shown in Figure 13; and Example 3 is the brightness distribution result of the light-emitting device 10L as shown in Figure 15. Furthermore, the aforementioned experimental results were obtained by simulation using LightTools simulation software.

[0064] As shown in Figure 17, compared to Comparative Examples 1 and 2, the light-emitting devices of Examples 1, 2, and 3 have larger emission angles, resulting in better brightness uniformity when applied to backlight modules. Furthermore, Examples 1-3 can all provide better emission angles for lateral light, appropriately supplementing weak light energy areas between light-emitting elements and providing uniform brightness. The light-emitting devices of Examples 1-3 can be used with different optical distances and pitches. For example, the architectures of Examples 1 and 2 are suitable for lamp panel module designs with a large pitch between light-emitting elements.

[0065] Please refer to Figure 18, which shows a schematic diagram of a backlight module 1 according to some embodiments of this disclosure. As shown in Figure 18, the backlight module 1 may include a substrate 102 and a plurality of light-emitting devices 10 disposed on the substrate 102. The light-emitting devices 10 may have the structure shown in any of the aforementioned light-emitting devices 10A to 10M. The light-emitting device 10 includes a light-emitting element 104, an encapsulation layer 106, and a dimming structure CS. The plurality of light-emitting devices 10 may be arranged in an array, for example, arranged with a first pitch (not shown) in the X direction and a second pitch (not shown) in the Y direction, the first pitch may be the same as or different from the second pitch. According to some embodiments, the light-emitting devices 10 may emit white light or blue light. According to some embodiments, the backlight module 1 may further include an optical component (not shown) disposed above the light-emitting devices 10, the optical component may include a diffusion film, a brightness enhancement film, a wavelength conversion layer, or other suitable optical film, but is not limited thereto.

[0066] In summary, the light-emitting device provided in this disclosure includes a dimming structure configured in a specific manner, thereby improving the light spot performance of the light-emitting element and enhancing the overall quality of the module. Furthermore, according to some embodiments of this disclosure, the dimming structure exhibits good structural stability and is not easily peeled off from the encapsulation layer due to external forces. According to some embodiments of this disclosure, the dimming structure includes multiple dimming layers configured in a specific size ratio, thereby improving the luminous efficiency and luminous uniformity of the light-emitting element.

[0067] While the embodiments and advantages of this disclosure have been disclosed above, it should be understood that anyone skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of this disclosure. Features between the embodiments disclosed herein can be freely combined and used as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this disclosure is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of the specification. Anyone skilled in the art can understand from the content of this disclosure the current or future development of processes, machines, manufacturing, material composition, apparatus, methods, and steps, and can use them according to this disclosure as long as they can perform substantially the same function or obtain substantially the same results in the embodiments described herein. Therefore, the scope of protection of this disclosure includes the aforementioned processes, machines, manufacturing, material composition, apparatus, methods, and steps. The scope of protection of this disclosure shall be determined by the appended claims. No embodiment or claim of this disclosure needs to achieve all the purposes, advantages, and features disclosed herein.

[0068] 1: Backlight Module 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H, 10I, 10J, 10K, 10L, 10M: Light-emitting devices 102:Substrate 104: Light-emitting element 104s: Luminous surface 106, 106': Encapsulation layer 106b: Bottom surface 106e, 106e': Emitting surface 107: Translucent Layer 107b bottom surface 107s: Side surface 108a, 108b, 108c: Light-shielding layers 108s: Side surface 108t: Top surface 110: Protective layer 110b: Bottom surface 112: Wavelength conversion layer CS: Dimming Structure Cx: Dimming layer D108a, D108b, D108c, D112, Da-1, Da-1, Da-2, Da-2: Arc length ep: end H106, H106', H107: Height L: Length Ld: Diagonal length mp: Main part T108a, T110, Tep-1, Tep-2, Tmp-1, Tmp-2: Thickness W, W106, W106', W107: Width θ1, θ2, θ3, θ4, θ5, θ a-2, θ b-2: included angle θ a-1, θ a-1', θ b-1: cutting angle

Claims

1. A light-emitting device, comprising: One substrate; A light-emitting element is disposed on the substrate, wherein the light-emitting element includes a light-emitting surface, and in a top view, the light-emitting surface has a diagonal length; an encapsulation layer covers the light-emitting element, wherein the encapsulation layer has a light-emitting surface that is arc-shaped, and the ratio of the height to the width of the encapsulation layer is less than or equal to 0.5; and a dimming structure is disposed on the light-emitting surface of the encapsulation layer, wherein the dimming structure includes at least one dimming layer, wherein the at least one dimming layer has an arc length that is greater than the diagonal length of the light-emitting surface.

2. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer is stacked on the light-emitting surface or is discontinuously distributed on the light-emitting surface.

3. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer includes at least one light-shielding layer, and optionally further includes one or more light-transmitting layers, one or more wavelength conversion layers, one or more protective layers, or a combination thereof.

4. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer comprises: A first light-shielding layer partially covers the light-emitting surface of the encapsulation layer and has a first arc length, wherein the first arc length is greater than the diagonal length of the light-emitting surface; And a second light-shielding layer, stacked on the surface of the first light-shielding layer and having a second arc length, wherein the first arc length is greater than the second arc length, and the second arc length is greater than the diagonal length of the light-emitting surface, wherein the arc length includes either the first arc length or the second arc length.

5. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer comprises: A first light-shielding layer partially covers the light-emitting surface of the encapsulation layer and corresponds to the light-emitting element. The first light-shielding layer has a first arc length, and the first arc length is greater than the diagonal length of the light-emitting surface. And a second light-shielding layer, disposed on the light-emitting surface of the encapsulation layer and surrounding the first light-shielding layer, wherein the second light-shielding layer is a patterned light-shielding layer.

6. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer comprises: A light-shielding layer partially covers the light-emitting surface of the encapsulation layer and has an arc length, wherein the arc length is greater than the diagonal length of the light-emitting surface; and a protective layer disposed on the encapsulation layer and covering the light-shielding layer, wherein the protective layer extends partially or completely on the light-emitting surface of the encapsulation layer.

7. The light-emitting device as claimed in claim 6, wherein the hardness of the protective layer is less than the hardness of the encapsulation layer.

8. The light-emitting device as claimed in claim 6, wherein the viscosity of the protective layer is less than the viscosity of the encapsulation layer.

9. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer further comprises: A light-transmitting layer is disposed on the encapsulation layer; And a light-shielding layer that partially covers a light-emitting surface of the light-emitting layer and has an arc length, wherein the arc length is greater than the diagonal length of the light-emitting surface.

10. The light-emitting device as claimed in claim 9, wherein the at least one dimming layer further comprises: A wavelength conversion layer is disposed between the light-transmitting layer and the encapsulation layer, wherein the wavelength conversion layer extends partially or completely on the light-emitting surface of the encapsulation layer.

11. The light-emitting device as claimed in claim 9, wherein the encapsulation layer includes a wavelength conversion material.

12. The light-emitting device as claimed in claim 10, wherein the arc length of the wavelength conversion layer is greater than or equal to the diagonal length of the light-emitting surface.

13. The light-emitting device as claimed in claim 9, wherein the ratio of the height to the width of the light-transmitting layer is less than or equal to 0.

5.

14. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer further comprises: A wavelength conversion layer is disposed on the encapsulation layer, wherein the wavelength conversion layer extends partially or completely on the light-emitting surface of the encapsulation layer; And a light-shielding layer is disposed on the wavelength conversion layer and partially or completely covers the wavelength conversion layer.

15. The light-emitting device as claimed in claim 1, wherein the at least one dimming layer comprises: A light-shielding layer partially covers the light-emitting surface of the encapsulation layer and has a main portion and an end portion connected to the main portion, wherein the arc length of the main portion is greater than the arc length of the end portion, and the thickness of the main portion is greater than the thickness of the end portion.

16. The light-emitting device as claimed in claim 15, wherein the end portion has a chamfer between the surface of the main portion adjacent to the surface of the main portion and the surface of the main portion, and the end portion has an included angle between the surface of the main portion away from the surface of the main portion and the surface of the encapsulation layer, and the chamfer is greater than the included angle.

17. The light-emitting device as claimed in claim 2, wherein the at least one dimming layer includes a light-shielding layer stack structure positioned corresponding to the light-emitting element and located on the light-emitting surface of the encapsulation layer, wherein the light-shielding layer stack structure includes a plurality of light-shielding layers, and the intermediate thickness of the light-shielding layer stack structure is greater than the end thickness of the light-shielding layer stack structure.

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