Method of forming a silicon on insulator substrate

Abstract

A method of forming an SOI substrate including a hydrogen thermal treatment performed on a pretreated sacrificial wafer, under high temperature. A stopper layer and a semiconductor layer may be sequentially formed on a first surface of the sacrificial wafer on which the hydrogen (H2) thermal treatment was performed. The stopper layer and the semiconductor layer may be formed by an epitaxial growth process using a mixed precursor including a monosilane (MS) source and a dichlorosilane (DCS) source.

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