Substrate processing method, substrate processing apparatus and substrate processing system

Abstract

This invention provides a technique to reduce defects at the root of a carbon film when forming a carbon film on top of a patterned underlayer film. A substrate processing method according to one aspect of this invention includes the following steps: preparing a substrate having a patterned underlayer film; hydrophobizing the surface of the top of the underlayer film by exposing the substrate to plasma generated from a first gas containing a modified gas; and selectively forming a carbon film on the hydrophobized top by exposing the substrate to plasma generated from a second gas containing a raw material gas containing carbon and hydrogen.

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