Semiconductor support structure, method for manufacturing semiconductor support structure, and method for manufacturing semiconductor device.

Abstract

The method for manufacturing the semiconductor support structure (10) of the present invention includes the following steps: obtaining a plurality of semiconductor thin films (110) formed by crystal growth on a growth substrate (101) and not bonded to the growth substrate (101); bonding the plurality of semiconductor thin films (110) to an intermediate sacrificial layer (121) formed on an intermediate substrate (120) different from the growth substrate (101); and forming a plurality of support layers (122) supporting the plurality of semiconductor thin films (110) by partially removing the intermediate sacrificial layer (121), and forming a gap (123) between the first surface of each semiconductor thin film (110) facing one side of the intermediate substrate (120) and the intermediate substrate (120).

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