Epitaxial growth method from nucleation layer

Abstract

This invention relates to an epitaxial growth method starting from a nucleation layer. A stack (1) is provided, comprising a support (100) including a substrate (10) based on a first semiconductor material, an insulating layer (20), and a nucleation layer (30). The support (100) has a portion not covered by the nucleation layer (30), referred to as an exposed portion (150). The exposed portion has an exposed upper surface (151) formed by the insulating layer (20) at this stage. The support is then modified such that the upper surface of the exposed portion (150) is at least partially composed of a layer based on a third semiconductor material, referred to as a semiconductor layer (10). Epitaxial growth is then performed starting from the nucleation layer (30).

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