Pecvd hbn film engineering for inter metal dielectric in 3D semiconductor devices

Abstract

Embodiments described herein generally relate to semiconductor devices. More specifically, embodiments described herein relate to the production of films with high thermal conductivity and low dielectric constants for use in 3D semiconductor device packages. In at least one embodiment, a 3D integrated circuit is provided. The 3D integrated circuit includes at least one inter metal dielectric layer disposed between two metal interconnect layers. The inter metal dielectric layer includes a hexagonal boron nitride film having a dielectric constant of less than or about

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