Semiconductor device
TW202636863APending Publication Date: 2026-09-01SK HYNIX INC
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Patent Information
- Application Number
- TW114148912
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-25
- Filing Date
- 2025-12-12
- Publication Date
- 2026-09-01
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Abstract
A semiconductor device including a substrate; an insulating layer disposed on the substrate, and including an outer boundary; a passivation layer disposed on the insulating layer, and including an inner boundary that is located inward of the outer boundary; a dummy pattern layer having a lower surface that forms the same plane with the lower surface of the passivation layer, overlapping at least a part of a region disposed between the outer and inner boundaries, and having a side surface that is located inward of the inner boundary; and a redistribution pattern layer disposed on the dummy pattern layer.
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