Method of forming silicon carbide device and ion beam implanter

Abstract

Disclosed herein are approaches for modifying one or more hardmask layers to enable channeling implantation on a silicon carbide device. One method may include forming a hardmask over a first silicon carbide (SiC) layer and a second SiC layer, wherein the hardmask includes a silicon layer and an oxide layer. The method may further include forming a trench through the hardmask, wherein the trench exposes a portion of the silicon layer. The method may further include performing a first implant to the silicon layer, through the trench, to form an amorphous region in the silicon layer, and performing a second implant, through the trench, to form an area of uniform dopant concentration in the second SiC layer.

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