Etching composition, etching method and method for manufacturing semiconductor device
TW202636865APending Publication Date: 2026-09-01MITSUBISHI CHEM CORP
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114151543
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-14
- Filing Date
- 2025-12-26
- Publication Date
- 2026-09-01
Abstract
This invention aims to provide an etching composition suitable for the manufacture of BSPDNs, an etching method using the etching composition, a method for manufacturing semiconductor devices, and a method for manufacturing transistors having a BSPDN structure. The etching composition of this invention comprises an alkaline compound (A) and an azo compound (B1), and selectively etches silicon relative to silicon and germanium.
Need to check novelty before this filing date? Find Prior Art