Method for use during the fabrication of a device

Abstract

The present disclosure relates to a method for use during the fabrication of a device. The method comprises providing a substrate carrying a carbon-based low dimensional material and a dielectric material. The method comprises selectively dry etching the dielectric material while maintaining the underlying carbon-based material unetched. Etching comprises placing the substrate in a vacuum chamber, and introducing a chlorine-based gas in the vacuum chamber. Etching the dielectric material also comprises generating a plasma in the vacuum chamber by applying a radiofrequency power source to the substrate holder, the radiofrequency power source being operated at a power wherein the underlying carbon-based material is unetched.

Images