Substrate processing method and substrate processing system

Abstract

Substrate processing method and system for embedding silicon-containing film in recess in substrate are provided. Substrate processing method for embedding silicon-containing film in recess includes (a) forming first fluidic film having first viscosity in recess by exposing substrate to plasma of first processing gas containing first silicon-containing gas and second silicon-containing gas different from first silicon-containing gas; (b) forming first silicon-containing film having voids by modifying first fluidic film by exposing substrate to plasma of first modifying gas; (c) forming second fluidic film having second viscosity lower than first viscosity in recess and voids in first silicon-containing film by exposing substrate to plasma of second processing gas containing first and second silicon-containing gases; and (d) forming second silicon-containing film by modifying second fluidic film by exposing substrate to plasma of second modifying gas.

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