Carbon-doped pvd deposited cobalt liner layer for improved cu reflow
TW202636958APending Publication Date: 2026-09-01APPLIED MATERIALS INC
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114143848
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-11-11
- Filing Date
- 2025-11-11
- Publication Date
- 2026-09-01
Smart Images
Figure TWG2TA001074642_001 
Figure TWG2TA001074642_002 
Figure TWG2TA001074642_003
Abstract
Interconnect structures in a microelectronic device and methods of forming the same are described. The method comprises processing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having one or more features including an opening, a sidewall, a top surface, a bottom. The method includes forming a cobalt liner layer having a thickness in a range of from
Need to check novelty before this filing date? Find Prior Art