Alignment mark for silicon carbide semiconductor process and manufacturing method thereof
TW202636972APending Publication Date: 2026-09-01PROASIA SEMICONDUCTOR CORP
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Patent Information
- Application Number
- TW114106771
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-24
- Publication Date
- 2026-09-01
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Abstract
An alignment mark for silicon carbide semiconductor process and a manufacturing method thereof are provided. The silicon carbide semiconductor process alignment mark is formed on a silicon carbide epitaxial layer of a silicon carbide substrate and includes at least one trench structure and an ion doped interface. The at least one trench structure is disposed in the silicon carbide epitaxial layer, and the ion doped interface is disposed at a bottom of the at least one trench structure.
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