Semiconductor device and manufacturing thereof

Abstract

A semiconductor device includes a substrate, a dielectric layer, a metal line layer, a passivation structure, an active bump, and a dummy bump. The dielectric layer is over the substrate. The metal line layer is over the dielectric layer, in which the metal line layer includes a via portion penetrating the dielectric layer. The passivation structure is over the metal line layer, in which the passivation structure includes a protrusion surrounded by the via portion of the metal line layer and a horizontal portion of the protrusion. The active bump penetrates the passivation structure to electrically connect to the metal line layer. The dummy bump is over the passivation structure, wherein the dummy bump overlaps the protrusion of the passivation structure in a cross-section view.

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