Package and method of forming the same
TW202637000APending Publication Date: 2026-09-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114129767
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-06-16
- Filing Date
- 2025-08-05
- Publication Date
- 2026-09-01
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Abstract
A method includes forming a base bond structure, bonding a first device die to a first side of the base bond structure, encapsulating the first device die in a first gap-fill region, and bonding a second device die to a second side of the base bond structure. The first device die is electrically coupled to the second device die through a first conductive feature in the base bond structure. The method further includes encapsulating the second device die in a second gap-fill region, thinning a semiconductor substrate in the second device die to reveal a through-via in the semiconductor substrate, and forming a second conductive feature. The second conductive feature is electrically coupled to the first device die through the through-via in the semiconductor substrate of the second device die. An electrical connector is formed and is connected to the second conductive feature.
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