Package and method of forming the same

TW202637000APending Publication Date: 2026-09-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114129767
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-06-16
Filing Date
2025-08-05
Publication Date
2026-09-01

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    Figure TWG2TA001074245_003
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Abstract

A method includes forming a base bond structure, bonding a first device die to a first side of the base bond structure, encapsulating the first device die in a first gap-fill region, and bonding a second device die to a second side of the base bond structure. The first device die is electrically coupled to the second device die through a first conductive feature in the base bond structure. The method further includes encapsulating the second device die in a second gap-fill region, thinning a semiconductor substrate in the second device die to reveal a through-via in the semiconductor substrate, and forming a second conductive feature. The second conductive feature is electrically coupled to the first device die through the through-via in the semiconductor substrate of the second device die. An electrical connector is formed and is connected to the second conductive feature.
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