Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device is provided that, even if it is a semiconductor device with two metal layers, can suppress the formation of cracks in the insulating film of the lower layer of the pad opening. The semiconductor device (100) includes: a first wiring layer (151) formed on the surface of a semiconductor substrate (110); an insulating film (133) formed on the upper layer of the first wiring layer (151) and having a thick film portion (133a) and a thin film portion (133b); a metal film (152) formed on the upper layer of the insulating film (133); a protective film (160) formed on the upper layer of the metal film (152); and a pad opening (180) formed on the protective film (160) with a portion of the metal film (152) exposed, and formed at a position overlapping the aforementioned thick film portion (133a) when viewed from above.

Images