Semiconductor device and method of manufacturing the same

Abstract

Provided is a semiconductor device capable of suppressing occurrence of cracks in an insulating film in a layer below a pad opening portion even in the semiconductor device including two layers of metal films. The semiconductor device includes: a first wiring layer formed on a surface of a semiconductor substrate; an interlayer insulating film formed in a layer above the first wiring layer; an etching stopper film formed in a layer above the interlayer insulating film; an insulating film formed in a layer above the etching stopper film, the insulating film including a thick film portion and an inclined portion; a metal film formed in a layer above the insulating film; a protective film formed in a layer above the metal film; and a pad opening portion formed in the protective film such that a part of the metal film is exposed, the pad opening portion being formed at a position overlapping the thick film portion in plan view.

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