Oversized silicon device using diamond for heat dissipation and manufacturing method thereof

TW202637014APending Publication Date: 2026-09-01COMPOUND SEMICON (XIAMEN) TECH CO LTD
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Patent Information

Application Number
TW114117263
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-19
Filing Date
2025-05-08
Publication Date
2026-09-01

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Abstract

The invention provides an oversized silicon device using diamond for heat dissipation and a manufacturing method thereof. The manufacturing method includes: Cleans and dry a single crystal silicon wafer at room temperature. Preprocess a single crystal silicon wafer with seed crystal so that a silicon surface covered by a layer of diamond nanocrystal layer, and places the single crystal silicon wafer in the MPCVD equipment. Evacuates a chamber of MPCVD equipment, then aerates hydrogen into the chamber, and then evacuates the chamber again. Aerates hydrogen in the chamber and adjusts pressure to
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