Oversized silicon device using diamond for heat dissipation and manufacturing method thereof
TW202637014APending Publication Date: 2026-09-01COMPOUND SEMICON (XIAMEN) TECH CO LTD
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Patent Information
- Application Number
- TW114117263
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-19
- Filing Date
- 2025-05-08
- Publication Date
- 2026-09-01
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Abstract
The invention provides an oversized silicon device using diamond for heat dissipation and a manufacturing method thereof. The manufacturing method includes: Cleans and dry a single crystal silicon wafer at room temperature. Preprocess a single crystal silicon wafer with seed crystal so that a silicon surface covered by a layer of diamond nanocrystal layer, and places the single crystal silicon wafer in the MPCVD equipment. Evacuates a chamber of MPCVD equipment, then aerates hydrogen into the chamber, and then evacuates the chamber again. Aerates hydrogen in the chamber and adjusts pressure to
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