Composite materials

Abstract

This invention provides a composite material capable of suppressing thermal stress problems associated with bonding during the manufacturing of SiC semiconductor power devices or during thermal cycling in semiconductor use. The composite material includes a low-thermal-expansion material and a high-thermal-expansion material, and has a diffusion layer at the interface between the low-thermal-expansion material and the high-thermal-expansion material. In this composite material, when the total thickness of the low-thermal-expansion material and the high-thermal-expansion material is set to 100, the Y-value calculated by (thickness ratio of the low-thermal-expansion material × Vickers hardness of the low-thermal-expansion material) / (thickness ratio of the high-thermal-expansion material × Vickers hardness of the high-thermal-expansion material) exceeds 0.72.

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